▎ 摘　　要

NOVELTY - The structure has a substrate (111), a source and drain region (121) formed on the substrate. A channel trench (191) is formed between the source and drain regions. A heavily doped ohmic contact region is formed in source drain region. A source drain electrode (182) is formed over the heavily doped ohmic contact region. A graphene film (161) located above the channel trench is in contact with portion of the source and drain regions to form a heterojunction. A gate dielectric layer and a gate electrode are formed on the graphene film, where gate dielectric layer is a high-K material. USE - Floating graphene-silicon heterojunction transistor structure. ADVANTAGE - The method improves the current switching ratio of the graphene field effect transistor, suppresses the scattering of the substrate, improves the carrier mobility and effectively improves the performance of the transistor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the floating graphene-silicon heterojunction transistor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the floating graphene-silicon heterojunction transistor structure. Substrate (111) Source and drain region (121) Graphene film (161) Source drain electrode (182) Channel trench (191)