▎ 摘　　要

NOVELTY - The generator has a semiconductor layer provided with a rear electrode. A graphene layer and the rear electrode are led-out by wires. The graphene layer and the semiconductor layer are filled with polar liquid, where polar liquid is water, methanol, ethanol or other polar solution. The semiconductor layer is made of silicon, gallium arsenide, indium gallium arsenic, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide and tungsten disulfide. The rear electrode is made of gold, palladium, silver, titanium, chromium and nickel. USE - Graphene/polar liquid/semiconductor dynamic diode based new-type direct current generator for use with portable electronic device. ADVANTAGE - The generator is simple to manufacture, and has small internal resistance and large power in series, and can control output voltage by graphene Fermi level, directly drive a portable electronic device and reduce production cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene/polar liquid/semiconductor dynamic diode based new-type direct current generator manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view representing relationship between a graphene/liquid/N-silicon dynamic diode generator under different liquids. (Drawing includes non-English language text).