▎ 摘　　要

NOVELTY - The method involves performing plasma-enhanced vapor deposition (PECVD) on upper surface of n-type silicon layer. A graphene layer is covered on an n-type silicon surface window. Amorphous silicon/amorphous silicon carbide multilayer film structure is formed with a graphene layer. Laser induced crystallization process is performed to form a laminated silicon quantum point multi-layer film and a heterojunction structure with a graphene layer. Gallium alloy film preparing process is performed. A bottom electrode is located on a lower surface of n-type silicon layer. An oxide layer is introduced at a graphene/silicon Schottky junction interface to modify the graphene/silicon Schottky junction interface. USE - Graphene/silicon structure solar cell manufacturing method. ADVANTAGE - The method enables forming a p type lamination silicon quantum dot/graphene/silicon dioxide/n-type silicon structure so as to effectively improve photoelectric conversion efficiency of a solar cell.