▎ 摘　　要

NOVELTY - The chip has a p-aluminum gallium nitride (AlGaN) layer formed on a p-gallium nitride (GaN) layer that is etched to form multiple small islands or low tables. A p-GaN low table-board is connected with a metal point that is fixed on a metal graphene. The metal graphene is contacted with an ohmic contact part to form a p-electrode or p-electrode. A chip is formed as a flip structure. A graphene layer is formed with a reflecting layer. The graphene layer is formed as a single-layer graphene. A metal layer is formed as silver (Ag), nickel (Ni) and Gold (Au). USE - UV semiconductor LED chip. ADVANTAGE - The chip uniformly improves migration of electrons and current distribution, and ensures contact resistance and luminous efficiency by etching gallium nitride layer so as to reduce absorption of UV wave band and improve UV light emitting rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an UV semiconductor LED chip. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a UV semiconductor LED chip.