• 专利标题:   Patterning method of graphene, involves applying heat in graphene and vaporizing graphene on metal pattern, such that pattern of graphene is removed and formed.
  • 专利号:   KR1400723-B1
  • 发明人:   JEONG S M, KANG T H, KIM S H, LEE K J, LHM K W, LIM J T, OH J S, PARK J W, YANG M H, YEOM G Y
  • 专利权人:   POSTECH ACADIND FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B29C059/02, G03F007/00, H01L021/027
  • 专利详细信息:   KR1400723-B1 30 May 2014 G03F-007/00 201450 Pages: 16
  • 申请详细信息:   KR1400723-B1 KR021855 28 Feb 2013
  • 优先权号:   KR021855

▎ 摘  要

NOVELTY - The method involves forming an oxide layer (200) on material (100) consists of silicone and ceramics. The metal pattern is formed on the oxide layer. The graphene is transferred to the oxide layer. The heat is applied in the graphene, and the graphene on the metal pattern (300) is vaporized, such that the pattern of the graphene is removed and formed. The heat applied in the graphene at the temperature of 2000-5000. The metal pattern of the graphene is etched. USE - Patterning method of graphene. ADVANTAGE - The pattern of the graphene is formed easily, and the cost required for patterning process of graphene is reduced. The patterning process is simplified, and the utilization efficiency of the graphene is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the patterning process of graphene. (Drawing includes non-English language text) Material (100) Oxide layer (200) Metal pattern (300) Graphene layer (400)