▎ 摘　　要

NOVELTY - The absorber has a structure unit provided with a first single-layer graphene strip (1), a first silicon dioxide isolation layer (3), a second single-layer graphene strip (2), a second silicon dioxide isolation layer (4), a gold reflecting layer (5) and a single crystal silicon substrate (6) from up to down along terahertz wave incident direction. An ion glue layer (7) is formed on the first single-layer graphene strip and the second single-layer graphene strip. A third silicon dioxide isolation layer (8) and a single crystal silicon isolation layer (9) are orderly arranged below the first single-layer graphene strip and the second single-layer graphene strip. A gold electrode (10) is fixed in the ion glue layer. USE - Chiral selection integrated terahertz near perfect absorber for absorbing a circularly polarized light in an imaging display and a chiral photoelectric detector. ADVANTAGE - The absorber can realize near perfect absorption of the right-handed circularly polarized light and keep higher circular dichroism, and can adjust the voltage of the power supply and active control of the working frequency, thus ensuring larger circular dichroism and large control range of working frequency. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a chiral selection integrated terahertz near perfect absorber for absorbing a circularly polarized light in an imaging display and a chiral photoelectric detector. First single-layer graphene strip (1) Second single-layer graphene strip (2) First silicon dioxide isolation layer (3) Second silicon dioxide isolation layer (4) Gold reflecting layer (5) Single crystal silicon substrate (6) Ion glue layer (7) Third silicon dioxide isolation layer (8) Single crystal silicon isolation layer (9) Gold electrode (10) First direct current power supply (11) Second direct current power supply (12)