▎ 摘　　要

NOVELTY - The structure has a substrate formed with multiple microelectronic assemblies. The microelectronic assembly respectively includes a graphene layer and three electrodes. First and second electrodes are directly contacted with two ends of the graphene layer. A first insulating layer is arranged between the graphene layer and the substrate. A second insulating layer is formed between a third electrode and the graphene layer, where bandgap of the graphene layer is greater than 300meV. The second insulating layer includes multiple isolation layers defining a range of the microelectronic assembly. USE - Microelectronic structure. ADVANTAGE - The structure uses a high energy graphene material so as to improve electronic characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a microelectronic structure forming method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a microelectronic structure forming method. '(Drawing includes non-English language text)'