▎ 摘　　要

NOVELTY - Preparing selectively reducing graphene oxide comprises (i) dispersing graphene oxide in the solvent to obtain graphene oxide solution, then adding catalyst composed of carbonate and silver salt into the graphene oxide solution, under the low temperature heating condition, continuously stirring until the color of solution is changed to black, (ii) centrifugal washing to remove the silver salt and carbonate, and (iii) centrifuging the solution to obtain the lower layer solid and drying it, and preparing re-dispersed selectively reduction-oxidation graphene oxide solid. USE - The selectively reducing graphene oxide is used in preparing electrical storage device (claimed). ADVANTAGE - The method solves the problem of high toxicity and uncontrollability in reduction process; expands the graphene oxide material reduction path; and is suitable in producing graphene-based material in chemical industry for producing electric storage device with excellent storage performance. DETAILED DESCRIPTION - Preparing selectively reducing graphene oxide comprises (i) dispersing graphene oxide in the solvent to obtain graphene oxide solution with the concentration of 0.1-2 mg/ml, then adding catalyst composed of carbonate and silver salt into the graphene oxide solution in a mol ratio of 1:1-1:2, where the mass ratio of graphene oxide and silver salt catalyst is 10:1-1:2, under the low temperature heating condition, continuously stirring until the color of solution is changed to black, (ii) centrifugal washing to remove the silver salt and carbonate, and (iii) centrifuging the solution to obtain the lower layer solid and drying it, and preparing re-dispersed selectively reduction-oxidation graphene oxide solid. An INDEPENDENT CLAIM is also included for the use method of selectively reducing graphene oxide in preparing electrical storage device, comprising (i) dispersing selectively reducing graphene oxide solid powder in water, ethanol, tetrahydrofuran, N,N-dimethyl formamide, or N-methyl pyrrolidone solvent to prepare homogeneous dispersion solution with mass volume concentration of 0.2-2 mg/ml, (ii) passing resulting homogeneous dispersion solution through dropping film, spin coating film or printing method to prepare a layer of thin film on silicon/silicon dioxide substrate, and (iii) adding 5-15 mg/ml poly methyl methacrylate in toluene solution, placing spin coated silicon/silicon dioxide substrate thin film, plating pentacene and gold electrode on the silicon/silicon dioxide substrate under vacuum deposition less than 10-6 Tesla to obtain silicon/silicon dioxide/selectively reducing graphene/polymethyl methacrylate/pentacene/metal structure of electrical storage, where the thickness of pentacene is 20-70 nm, and the thickness of gold electrode is 10-30 nm.