▎ 摘　　要

NOVELTY - The method involves carrying the substrate into a processing container (101). A substrate support pin (125) of a mounting table (102) arranged in the processing container is raised and the first plasma processing is performed while holding the carried-in substrate in the first position. The second plasma processing is performed in a state where the substrate support pin is lowered and the substrate is held at the second position. The second position is the position where the substrate is placed on the table. The first position is a position where the substrate is supported above the table. The first position is a position 2 mm or more above the stand. The oxide formed on the base film is removed. The first plasma processing is performed at a first temperature and a first pressure using plasma of a hydrogen-containing gas. The time of the first plasma processing is 60 seconds or less. The target film for film formation is formed on the undercoat film. USE - Substrate processing method for processing substrate such as wafer. ADVANTAGE - The high-quality and low-defect graphene film is formed on the polycrystalline silicon film by the substrate processing apparatus. DETAILED DESCRIPTION - The target film is a carbon film, which is graphene film. The undercoat is a polycrystalline silicon film. The second plasma treatment is performed at second temperature higher than the first temperature and second pressure higher than the first pressure, using plasma of mixed gas containing raw material gas and hydrogen gas. The first temperature is 350 degrees C or less. The second temperature is 400 degrees C or higher. The plasma treatment is performed in a state where the substrate does not exist in the processing container. The degas step of drawing out and removing oxygen is performed in the processing container using plasma of hydrogen-containing gas. An INDEPENDENT CLAIM is included for a substrate processing apparatus (100), which includes the processing container that accommodates the substrate with the base film. The mounting table is placed in the processing container. A control unit (106) is configured to control the substrate processing apparatus so as to carry the substrate into the processing container. The control unit is configured to control the substrate processing apparatus so as to raise the substrate support pin of the stand to perform the first plasma processing while holding the carried-in substrate in the first position. The control unit is configured to control the substrate processing apparatus so as to perform the second plasma processing in a state where the substrate support pin is lowered to hold the substrate at the second position. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the substrate processing apparatus. Substrate processing apparatus (100) Processing container (101) Mounting table (102) Control unit (106) Substrate support pin (125)