▎ 摘　　要

NOVELTY - A non-blinking quantum dot (NBQD) comprises a core, an inner shell layer covering a surface of the core, and an outer shell layer covering a surface of the inner shell layer. The core is formed of cadmium selenide or cadmium zinc selenide. The inner shell layer is formed of zinc selenide and the outer shell layer is formed of zinc sulfide or zinc oxide. USE - Non-blinking quantum dot used for forming layer of quantum dot-based light-emitting diode (claimed) for lighting application. Can also be used for biomolecule labeling and immunodetection. ADVANTAGE - The non-blinking quantum dot provides the quantum dot-based light-emitting diode having excellent current efficiency or external quantum efficiency and red, green and blue brightness of the LED. The outer shell layer is environmentally-friendly and its surface is more stable and less prone to damage during application. DETAILED DESCRIPTION - A non-blinking quantum dot (NBQD) comprises a core, an inner shell layer covering a surface of the core, and an outer shell layer covering a surface of the inner shell layer. The core is formed of cadmium selenide or cadmium zinc selenide of formula: CdmZn1-mSe. The inner shell layer is formed of zinc selenide and the outer shell layer is formed of zinc sulfide or zinc oxide. m = 0-1 (excluding 0 and 1). INDEPENDENT CLAIMS are included for the following: (1) manufacture of NBQD, which involves providing a dispersion agent of a core material, a dispersion agent of a material source of the inner shell layer and a dispersion agent of a material source of the outer shell layer, dripping the dispersion agent of the material source of the inner shell layer to the dispersion agent of the core material at a rate of 1-20 mL/hour under an anaerobic condition, so that a material of the inner shell layer is grown in situ on a surface of the core material to obtain a dispersion agent of an intermediate, and dripping the dispersion agent of the material source of the outer shell layer to the dispersion agent of the intermediate at a rate of 1-20 mL/hour under an anaerobic condition, so that a material of the outer shell layer is grown in situ on a surface of the intermediate. The material source of the inner shell layer is a mixture of a zinc source and a selenium source. The material source of the outer shell layer is a mixture of a zinc source and a sulfur source, or a zinc oxide source. The intermediate comprises a core and an inner shell layer covering a surface of the core; and (2) quantum dot-based light-emitting diode (QDLED), which consists of a substrate, a bottom electrode, a hole injection layer, a hole transport layer, NBQD light-emitting layer, an electron transport layer and top electrode which are sequentially stacked. The substrate, the bottom electrode, the electron transport layer, the NBQD light-emitting layer, the hole transport layer, the hole injection layer and the top electrode are sequentially stacked. The NBQD light-emitting layer is formed of the NBQD.