▎ 摘　　要

NOVELTY - High frequency switch comprises a transistor for selective changing of resistance of either an interrupting gap provided between parts of a first conductor or a spacing gap between the first conductor and a second conductor. The transistor has a source (101) and a drain (102) connected via a two-dimensional semiconducting layer forming a channel (103) having a first conductivity type. A gate over the channel having a gate electrode (105). A gate insulator layer (104) is provided between the gate electrode and the channel. A two-dimensional semiconducting gate electrode is arranged in the gap and is connected to a control electrode. The channel comprises an electron gas having n-conductivity type. The gate electrode has a graphene layer having p-conductivity type. USE - The high frequency switch is useful for switching microwave, millimeter wave and higher frequency signals e.g. switched-beam reconfigurable antennas, polarization switching, multi-band receivers, transceivers, time division duplexing systems, and test circuits with multiple signal paths. ADVANTAGE - The parasitic capacitances are blocked with increased resistance and therefore their contribution to transistor operation is reduced. When the channels are depleted the gate electrodes resistivity is increased, therefore reflectance and transmittance in on-state are improved as the characteristic impedance of the line is not affected. When channel is enriched and signal line is short circuited to the ground plane, the electrodes resistance is low and therefore isolation is improved. The spacing gaps and the signal line advantageously are narrowed down in the area in which the transistor is located. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the high frequency switch. 101Source 102Drain 103Channel 104Gate insulator layer 105Gate electrode