▎ 摘　　要

NOVELTY - The method for constructing a near-infrared self-driving photodetector based on semiconductor nanowires or graphene, involves designing a geometrically asymmetric semiconductor nanowire composite structure and using the substrate Germanium (Ge) to dope graphene. The annealing temperature and time of the device are controlled to optimize the interface. The graphene film is prepared by chemical vapor deposition and is transferred to the Ge substrate to obtain a graphene sample, and then the semiconductor nanometer. The wire suspension is coated on the graphene sample to obtain the semiconductor nanowire. USE - Method for constructing a near-infrared self-driving photodetector based on semiconductor nanowires or graphene. ADVANTAGE - Method is ideal for near infrared light response. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of a method for constructing a near-infrared self-driving photodetector based on semiconductor nanowires or graphene. (Drawing includes non-English language text).