• 专利标题:   Single crystal silicon texturing additive comprises graphene oxide quantum dot solution comprising graphene quantum dots having specified size, surfactant, alkali metal hydroxide and/or carbonate, and deionized water.
  • 专利号:   CN110295395-A
  • 发明人:   WANG J, JU Q, MA Y, WANG W
  • 专利权人:   SHANGHAI INST CERAMICS CHINESE ACAD SCI
  • 国际专利分类:   C30B029/06, C30B033/10
  • 专利详细信息:   CN110295395-A 01 Oct 2019 C30B-033/10 201984 Pages: 13 Chinese
  • 申请详细信息:   CN110295395-A CN10640862 16 Jul 2019
  • 优先权号:   CN10640862

▎ 摘  要

NOVELTY - A single crystal silicon texturing additive comprises 0.01-15 wt.% graphene oxide quantum dot solution, 1-10 wt.% surfactant, 0.05-3 wt.% alkali metal hydroxide and/or 0.05-3 wt.% carbonate, and balance deionized water. The graphene oxide quantum dot solution comprises 0.02-1 wt.% graphene oxide quantum dot. The graphene quantum dots have size of 2-10 nm and oxygen content of 25-65 atomic%. USE - Single crystal silicon texturing additive. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of texturing single crystal silicon.