▎ 摘　　要

NOVELTY - Semiconductor memory device comprises a substrate (100) including an active region defined by device separation film, where the active region including a first portion and second portions, the second portions being on two opposite sides of the first portion, a bit line on the substrate and extending across the active region, and a bit line contact between the substrate and the bit line and connected to the first portion of the active region, where the bit line contact includes a first ruthenium pattern, and a width of upper surface of the first ruthenium pattern is smaller than a width of bottom surface of the first ruthenium pattern. USE - Semiconductor memory device. ADVANTAGE - The semiconductor memory device improves electric characteristic and reliability and reduces resistance of the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a device. 100Substrate 102Cell device separation films 111Contact barrier films 131Lower conductive lines 132Upper conductive lines