▎ 摘　　要

NOVELTY - A graphene layer (20) is formed on an insulating layer (12), and a stack of primary and secondary metal portions are formed on graphene layer. The sidewalls of primary metal portion are vertically coincident with sidewalls of secondary metal portion. The sidewalls of primary metal portion are subjected to laterally offsetting relative to sidewalls of secondary metal portion by a lateral distance, and transistor structure is formed. USE - Formation of transistor structure. ADVANTAGE - The transistor structure having favorable dimensional stability and performance is formed. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of structure after deposition of blanket gate dielectric layer. Substrate (8) Substrate layer (10) Insulating layer (12) Graphene layer (20) Dielectric seed layer (30)