▎ 摘　　要

NOVELTY - Preparing graphene catalyst based copper nano wires involves carrying out flattening process of high-purity aluminum sheet and oxidizing aluminum sheet at 3-6 degrees C for 24 hours under direct current and voltage of 40 Volts. The concentration of oxalic acid solution is 0.3-0.5 mole/liter. The oxidized aluminum sheet is soaked in chromium phosphate solution at 45 degrees C for 24 hours to remove the generated surface of anodized aluminum. The secondary oxidation is carried out. The hydrochloric acid solution of cupric chloride is added to remove aluminum base. USE - Method for preparing graphene catalyst based copper nano wires used for manufacturing semiconductor devices. (claimed). ADVANTAGE - The method enables to prepare graphene catalyst based copper nano wires that has high density and good quality. DETAILED DESCRIPTION - Preparing graphene catalyst based copper nano wires involves carrying out flattening process of high-purity aluminum sheet and oxidizing aluminum sheet at 3-6 degrees C for 24 hours under direct current and voltage of 40 Volts. The concentration of oxalic acid solution is 0.3-0.5 mole/liter. The oxidized aluminum sheet is soaked in chromium phosphate solution at 45 degrees C for 24 hours to remove the generated surface of anodized aluminum. The secondary oxidation is carried out. The hydrochloric acid solution of cupric chloride is added to remove aluminum base and to obtain the barrier layer of anodized aluminum. The anodized aluminum floats at 35-40 degrees C for 10-20 minutes. 4-6 wt.% Phosphoric acid solution is added to remove barrier anodic aluminum oxide layer on the back and then aluminum sheet is placed in 0.3-0.5 mole/liter oxalic acid solution for 1-2 hours to obtain 40 mu m thick anodized aluminum template. The copper film of thickness 40-50 nm is deposited at a rate of 1-1.5 Angstrom/s on one side of the anodic aluminum oxide template through hole. The copper film as a cathode and the negative power supply are connected to the other side of anodic aluminum oxide template. The copper chloride acid solution, boric acid solution and cupric chloride are connected to the positive power supply. The plating is carried out for 100 minutes to obtain a length of 10-20 mu m ordered copper nano wires. The length of the copper film is removed from the plating apparatus by dipping in 20 g/liter ammonium sulfate solution. The copper film is deposited on the anodic aluminum oxide template. The copper film is removed from anodic aluminum oxide template and transferred to chemical vapor deposition reactor chamber under argon and methane environment to maintain the gas flow rate, where ratio of argon and methane is 10:1-2:1, the flow rate of argon gas is 20-200 standard cubic centimeter per minute, the flow rate of methane gas is 10-20 standard cubic centimeter per minute and chamber pressure is maintained at 0.1-1 Torr. The growth of graphene as a catalyst is carried out at 900-1100 degrees C for 20-60 minutes. The gases argon and methane are constant to maintain the flow in the reaction chamber. The reaction chamber pressure is maintained at 0.1-1 Torr. The film is naturally cooled to 100 degrees C to complete graphene growth.