▎ 摘　　要

NOVELTY - Preparation of a silicon-based back-gate all-graphene field-effect transistor involves preparing a single-layer graphene film by a mechanical peeling method, then transferring to a silicon/silicon oxide substrate by dry transfer to obtain a graphene sample, spin coating the graphene sample with hydrogen-silsesquioxane inorganic photoresist at low speed initially, and switching to medium and high speed spin coating, transferring the obtained sample to a constant temperature heating stage to obtain a patterned mask, subjecting the patterned mask to electron beam exposure treatment under the exposure parameters, removing the patterned sample for development and fixing, and drying to obtain sample to be etched, subjecting the sample to be etched to oxygen plasma etching process to prepare graphene nanoribbon channels and graphene electrodes, and subjecting to stripping process to remove the hydrogen-silsesquioxane photolithography glue. USE - Manufacture of silicon-based back-gate all-graphene field-effect transistor. ADVANTAGE - The method enables manufacture of silicon-based back-gate all-graphene field-effect transistor with excellent device performance, and electrical characteristics, and suppressed defects caused by multiple transfers, and contact resistance and parasitic capacitance introduced by external electrodes.