▎ 摘　　要

NOVELTY - The method comprises transferring a first two-dimensional material mask layer to an upper surface of a template layer. A second layer of single crystal nitride is deposited on the first two dimensional mask layer through mask protection and selective etching process. The first two-dimensional mask layer is formed by multiple periodically arranged through holes of a first through hole of the first through-hole array, where the depth of each through hole is consistent with the thickness of a second two dimensional material mask. A third layer of the single crystalline nitride on the second two- dimensional mask is deposited. The third layer is extended to a position of the second through hole array corresponding to the second dislocation filter layer. The second dislocated filter layer is transferred to the upper surface to dislocate the filter layer on the surface of the third through hole. USE - The method is useful for preparing single crystal nitride micro-LED array based on non-single crystal substrate, which is useful for preparing radio frequency device, power device, light emitting device and detection device. ADVANTAGE - The single crystal nitride functional structure with super-high quality can be realized on the non-single crystal substrate with large lattice mismatch and large heat expansion coefficient mismatch. The method is simple and suitable for batch production.