▎ 摘　　要

NOVELTY - Manufacture of graphene (32) involves forming carbon layer and metal layer (31), heating carbon layer, forming carbon solution layer, sublimating resultant carbon solution layer and metal layer, and forming monolayer or multilayered graphene. USE - Manufacture of graphene used for graphene bending transistor for electronic component (all claimed). ADVANTAGE - The method enables manufacture of graphene having excellent quality and electron mobility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) low-temperature direct growth of graphene on substrate (10); (2) graphene bending transistor; and (3) electronic component. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view explaining low-temperature direct growth of graphene on substrate. Substrate (10) Metal layer (31) Graphene (32)