• 专利标题:   Deposition of two-dimensional layer on substrate in process chamber of chemical vapor deposition reactor, involves feeding one or more reactive gases into a process chamber and depositing spaced apart crystalline regions on surface of substrate under specific process parameters.
  • 专利号:   DE102020122677-A1
  • 发明人:   MCALEESE C, CONRAN B R, TEO K B K
  • 专利权人:   AIXTRON SE
  • 国际专利分类:   C23C016/44
  • 专利详细信息:   DE102020122677-A1 03 Mar 2022 C23C-016/44 202221 Pages: 13 German
  • 申请详细信息:   DE102020122677-A1 DE10122677 31 Aug 2020
  • 优先权号:   DE10122677

▎ 摘  要

NOVELTY - Deposition of two-dimensional layer involves feeding one or more reactive gases into a process chamber (6), (a) depositing spaced apart crystalline regions on the surface of the substrate (5), in which the process parameters are selected such that adsorbates of the reactive gas or its decomposition product adsorbed on the surface have initial, low surface mobility, (b) selecting the process parameters in such a way that the surface mobility of the adsorbates adsorbed on the surface is higher than in the process step (a), and selecting process parameters in such a way that the crystalline regions combine to form a closed layer. The process parameters include at least one temperature, a total gas pressure in the process chamber, the type of reactive gas and a partial pressure of the reactive gas in the process chamber or a mass flow of the reactive gas in the process chamber. The sequential process steps (a, b, c) differ in that at least one of the process parameters differs. USE - Deposition of two-dimensional layer on substrate e.g. crystalline substrates in process chamber of chemical vapor deposition reactor. ADVANTAGE - The method provides the deposited layer with improved quality. DESCRIPTION OF DRAWING(S) - The drawings show a schematic views of the CVD reactor. Chemical vapor deposition reactor (1) Gas exit surface (3) Susceptor (4) Substrate (5) Process chamber (6)