▎ 摘　　要

NOVELTY - Preparing diamond-based gallium nitride epitaxial substrate structure, involves (a) preparing an aluminum nitride nucleating layer on a diamond substrate, (b) growing a graphene layer on the surface of the copper foil, (c) transferring the graphene layer from the copper foil onto the aluminum nitride nucleation layer, and (d) epitaxially growing a gallium nitride epitaxial layer on the graphene layer to obtain a diamond-based gallium nitride epitaxial substrate structure. USE - Method for preparing diamond-based gallium nitride epitaxial substrate structure. ADVANTAGE - The gallium nitride layer has good lattice orientation, and the aluminum nitride nucleation layer plays a role in lattice correction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a diamond based gallium nitride epitaxial substrate structure, which comprises diamond substrate, the aluminum nitride nucleating layer, the graphene layer and the gallium nitride epitaxial layer are sequentially arranged from bottom to top in a stacked mode, where aluminum nitride nucleation layer has a thickness of 15-100 nm.