• 专利标题:   Method for manufacturing and transferring graphene electrode of transistor, involves doping graphene surface, completing conveying operation of structure electrodes when structure electrode is placed in target position.
  • 专利号:   CN107230615-A, CN107230615-B
  • 发明人:   WANG X, HE D, WU B, LV W, SHI Y
  • 专利权人:   UNIV NANJING, UNIV NANJING
  • 国际专利分类:   H01L021/28, H01L029/417, H01L029/45
  • 专利详细信息:   CN107230615-A 03 Oct 2017 H01L-021/28 201775 Pages: 9 Chinese
  • 申请详细信息:   CN107230615-A CN10316136 08 May 2017
  • 优先权号:   CN10316136

▎ 摘  要

NOVELTY - The method involves coating a surface of a substrate with graphene. Graphene surface UV ozone processing operation is performed. A graphene surface is doped according to doping requirement. A patterned metal is placed on the graphene surface as a supporting layer to obtain a metal/graphene composite structure electrode under a microscope. The structure electrode is conveyed to a transistor channel. The structure electrode is viewed through the microscope. Conveying operation of multiple structure electrodes is completed when the structure electrode is placed in a target position. USE - Method for manufacturing and transferring a graphene electrode of a transistor. ADVANTAGE - The method enables avoiding utilization of organic solvent at high temperature state so as to reduce damage of a transistor channel material and improve contact performance of a transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene electrode.