• 专利标题:   Photomask has anti-contamination layer that is provided with graphene layer, is configured to contact with top surfaces of patterns, and is spaced apart from substrate between the patterns.
  • 专利号:   US2014220481-A1, KR2014099103-A
  • 发明人:   KIM M J, LEE D, KIM S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   G03F001/48, G03F001/38, H01L021/027
  • 专利详细信息:   US2014220481-A1 07 Aug 2014 G03F-001/48 201456 Pages: 17 English
  • 申请详细信息:   US2014220481-A1 US136560 20 Dec 2013
  • 优先权号:   KR011936

▎ 摘  要

NOVELTY - The photomask (50) has a substrate (100), the patterns (110) are positioned on the substrate, and an anti-contamination layer (120) is located on the patterns. The anti-contamination layer is provided with a graphene layer (125), is configured to contact with top surfaces of the patterns, and is spaced apart from the substrate between the patterns. The graphene layer is doped with impurities that include boron, nitrogen, fluorine, platinum, gold, silver, and kalium. USE - Photomask. ADVANTAGE - Since the anti-contamination layer is provided with graphene layer, is configured to contact with top surfaces of patterns, and is spaced apart from substrate between the patterns, the external contamination materials rarely adhere to the anti-contamination layer so that the cleaning period and the lifetime of the photomask is increased. Since the graphene layer of the anti-contamination layer has a desirable light transmittance, the anti-contamination layer rarely influences the photolithography process using the photomask. Thus, the photomask is capable of minimizing or preventing contamination reliably. DESCRIPTION OF DRAWING(S) - The drawings show the cross-sectional view illustrating a photomask and an enlarged view of a pattern and an anti-contamination layer. Photomask (50) Substrate (100) Patterns (110) Anti-contamination layer (120) Graphene layer (125)