▎ 摘　　要

NOVELTY - The TFT (TR1) has gate insulating layer (120) disposed between the gate electrode (GE1) and the semiconductor layer (130). A source electrode (SE1) overlaps with the semiconductor layer. A drain electrode (DE1) overlaps with the semiconductor layer, and is vertically spaced apart from the source electrode. A source-drain electrode layer (150) is disposed between the source electrode and the drain electrode. A first graphene pattern (140) is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode. USE - TFT for display apparatus. ADVANTAGE - Graphene pattern is used to improve electrical stability and reliability of TFT of the display apparatus. Graphene pattern also prevents at least one of the source electrode and the drain electrode from reacting with the passivation layer so as to simplify the manufacturing process and as well as reduce the manufacturing cost of the TFT. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the array substrate. Gate insulating layer (120) Semiconductor layer (130) First graphene pattern (140) Source-drain electrode layer (150) Drain electrode (DE1) Gate electrode (GE1) Source electrode (SE1) TFT (TR1)