▎ 摘　　要

NOVELTY - Preparing controlled growth of graphene layers using organometallic compounds comprises (i) cleaning the copper substrate with acetone, ethanol and deionized water, and then drying; (ii) placing the treated copper substrate in chemical vapor deposition (CVD) tube furnace chamber, passing protective gas, heating, annealing, so as grow copper crystal grains; (iii) heating to growth temperature, passing carrier gas and vapors of volatile organometallic compounds, so as to grow graphene; (iv) cooling copper substrate; and (v) lowering the copper substrate temperature, and taking out the graphene. USE - The method is useful for preparing controlled growth of graphene layers using organometallic compounds (claimed). ADVANTAGE - The method realizes controlled preparation of at least two layers and uniform graphene on the copper substrate. DETAILED DESCRIPTION - Preparing controlled growth of graphene layers using organometallic compounds comprises (i) cleaning the copper substrate respectively with acetone, ethanol and deionized water, for 5-30 minutes, and then drying the substrate with nitrogen having purity of 99.999%; (ii) placing the treated copper substrate in chemical vapor deposition (CVD) tube furnace chamber, passing protective gas, heating to annealing temperature, thermally annealing, so as grow copper crystal grains; (iii) heating to growth temperature, passing carrier gas and vapors of volatile organometallic compounds, so as to grow graphene; (iv) rapidly cooling the copper substrate, and extracting the residual gas from the CVD tube furnace; and (v) lowering the copper substrate temperature to room temperature, and taking out the prepared graphene.