▎ 摘　　要

NOVELTY - Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder under lower protective atmosphere or vacuum protection, raising the mixture, sintering the mixture, cooling the sintered mixture to room temperature and then calcining, soaking calcined product in hydrofluoric acid and hydrochloric acid in a mole ratio of 0.5-10:1, processing acid for 1-48 hours, washing the product with deionized to pH value of 7, and performing drying process. USE - The method is useful for preparing silicon carbide nanowhisker (claimed). ADVANTAGE - The method is capable of simply preparing the silicon carbide nanowhisker with high yield, melting point, strength and heat expansion coefficient. DETAILED DESCRIPTION - Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder according to a mass ratio of 0.01-100:1 under lower protective atmosphere or vacuum protection, raising the mixture at heating rate of 1-15 degrees C/minutes, a temperature of 1000-2400 degrees C for 10-200 minutes, sintering the mixture at 1-15 degrees C/minutes, cooling the sintered mixture to room temperature and then calcining at 400-1200 degrees C in an air for 5-300 minutes, soaking calcined product in hydrofluoric acid and hydrochloric acid in a mole ratio of 0.5-10:1, processing acid for 1-48 hours, washing the product with deionized to pH value of 7, and performing drying process.