• 专利标题:   Electron and optical device for use in electronic device, has laminated structure, in which intermediate layer is arranged between laminar substance material layer and metal electrode layer, where intermediate layer is taken as crystal layer.
  • 专利号:   WO2023119961-A1
  • 发明人:   WENHSIN C, TOSHIFUMI I, NAOYA O, YUTA S, SHOGO H
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY
  • 国际专利分类:   H01L021/28, H01L029/786
  • 专利详细信息:   WO2023119961-A1 29 Jun 2023 H01L-029/786 202355 Pages: 26 Japanese
  • 申请详细信息:   WO2023119961-A1 WOJP042493 16 Nov 2022
  • 优先权号:   JP207760

▎ 摘  要

NOVELTY - The electron and optical device (1) has a laminated structure, in which an intermediate layer is arranged between a layered substance material layer (2) and a metal electrode layer (3). The intermediate layer is taken as a crystal layer (4) of an intermediate layer made of antimony, and Bismuth and Tellurium. The layered substance material layer is formed by including semiconductor transition metal dichalcogenide and graphene. A gate electrode is arranged on the layered substance material layer through an insulating film (5). A source electrode portion is constituted by laminating the intermediate layer and the metal electrode layer on the laminar substance material layer. USE - Electron and optical device for use in electronic device. ADVANTAGE - The contact resistance that occurs between a layered substance material layer and a metal electrode layer is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing an electron and optical device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the electron and optical device. (Drawing includes non-English language text) 1Electron and optical device 2Layered substance material layer 3Metal electrode layer 4Crystal layer 5Insulating film