▎ 摘　　要

NOVELTY - The quantum dot LED includes an anode (1) and a cathode (5) provided oppositely. A quantum dot light-emitting layer (3) is provided between the anode and the cathode. A hole function stack layer (2) is provided between the anode and the quantum dot light-emitting layer. The hole function stack layer comprises a hole injection layer (21), a hole transport layer (23) provided on the hole injection layer, and an interface layer (22) provided between the hole injection layer and the hole transport layer. The hole injection layer is provided adjacent to the anode. The material of the hole injection layer contains a transition metal oxide. The hole transport layer is provided adjacent to the quantum dot light-emitting layer. The material of the hole transport layer contains organic hole transport material, and the material of the interface layer is graphene-based material. USE - Quantum dot LED. ADVANTAGE - The highest occupied molecular orbital (HOMO) of the organic hole transport material is improved. The hole injection efficiency is increased and charge balance is improved, thus improving the performance of the quantum dot LED. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method of quantum dot LED. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the quantum dot LED. Anode (1) Hole function stack layer (2) Quantum dot light-emitting layer (3) Cathode (5) Hole injection layer (21) Interface layer (22) Hole transport layer (23)