• 专利标题:   Preparing graphene-CCTO-based ceramic complex dielectric material useful for giant dielectric materials in high density memory devices, comprises e.g. dissolving a metal ion source in a solvent, mixing and aging.
  • 专利号:   CN110357612-A
  • 发明人:   ZENG H, HUANG Y, HE J
  • 专利权人:   UNIV EAST CHINA NORMAL CHONGQING RES INS, UNIV EAST CHINA NORMAL
  • 国际专利分类:   C04B035/462, C04B035/622
  • 专利详细信息:   CN110357612-A 22 Oct 2019 C04B-035/462 201988 Pages: 7 Chinese
  • 申请详细信息:   CN110357612-A CN10697433 30 Jul 2019
  • 优先权号:   CN10697433

▎ 摘  要

NOVELTY - Preparing graphene-CCTO-based ceramic complex dielectric material comprises dissolving a metal ion source in a solvent, and mixing to obtain a precursor sol of a CCTO-based ceramic material, allowing the precursor sol of the CCTO-based ceramic material to stand for aging, adding the graphene oxide dispersion, mixing, drying to obtain a precursor dry powder of the graphene-CCTO-based ceramic material, grinding the precursor dry powder of the graphene-CCTO-based ceramic material into a fine powder, irradiating under a low power laser to obtain a graphene-CCTO-based ceramic complex powder, subjecting the graphene-CCTO-based ceramic complex powder to compaction molding and synthesizing under a high power laser to obtain the graphene-CCTO-based ceramic complex dielectric material. USE - The material is useful for giant dielectric materials in high density memory devices. ADVANTAGE - The material has fine particle size, good compactness and large dielectric property and the method is economical and fast.