▎ 摘　　要

NOVELTY - Usage method of graphene film as carrier injection layer in vertical structure of light emitting diode involves forming substrate, forming carrier injection layer on the substrate, forming light emitting layer on the carrier injection layer, forming a graphene film on the light emitting layer, and forming metal electrode layer. The metal electrode layer has lower metal electrode layer and upper metal electrode layer. USE - Usage method of graphene film as carrier injection layer in vertical structure of light emitting diode. ADVANTAGE - The method economically enables usage of graphene film as carrier injection layer in vertical structure of light emitting diode.