▎ 摘　　要

NOVELTY - Thin film transistor comprises substrate (110); gate electrode (124) disposed on substrate; semiconductor layer (151) disposed on substrate and has channel region; source electrode (173) and drain electrode (175) spaced apart from each other with respect to channel region of semiconductor layer; insulating layer (140) disposed between gate electrode and semiconductor layer; and barrier layer (160) disposed between semiconductor layer and source electrode and between semiconductor layer and drain electrode, in which barrier layer comprises graphene. USE - The thin film transistor used for thin film transistor array panel (claimed) for liquid crystal display or for LED display. ADVANTAGE - The barrier layer prevents diffusion of metal material of main wiring layer and reduces foreign substances defect including projection. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thin film array panel comprising thin film transistor, gate line, data line, passivation layer, and pixel electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of thin film transistor. Substrate (110) Gate electrode (124) Insulating layer (140) Semiconductor layer (151) Barrier layer (160) Source electrode (173) Drain electrode (175)