▎ 摘　　要

NOVELTY - Semiconductor device comprises substrate 110. The first insulation layer is set on substrate. The conductive contact is set in first insulation layer. The second insulation layer is set on first insulation layer and including contact hole that exposes top surface of conductive contact. The lower electrode is set above substrate and cylinder-shaped with filled interior. The lower electrode extends in contact hole of second insulation layer and contacting top surface of conductive contact. The dielectric layer is set on lower electrode and including first portion that is set on upper portion of lower electrode and second portion that is set on lower portion of lower electrode. The first upper electrode is set on first portion of dielectric layer, and including body portion and end portion. The second upper electrode is set on first upper electrode and on second portion of dielectric layer. The second upper electrode includes first portion that is set on first upper electrode. USE - Semiconductor device. ADVANTAGE - The semiconductor device improves step coverage. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of semiconductor device. Substrate (110) 3-dimensional structure (140) Adsorption control layer (160) Material layer (170)