▎ 摘　　要

NOVELTY - Making a strip shaped graphene layer (10), comprises providing a graphene film (30) on a surface of a metal substrate (20), disposing a carbon nanotube structure (40) on the graphene film, removing parts of the graphene film exposed by the at least one strip-shaped gap by reactive ion etching method to obtain a strip shaped graphene layer under the carbon nanotube structure, and separating the carbon nanotube structure with the strip shaped graphene layer. The carbon nanotube structure comprises at least one drawn carbon nanotube film comprising carbon nanotube segments. USE - The method is useful for making a strip shaped graphene layer (claimed), which is useful as conductive layers in semiconductor devices such as sensors, transistors, solar cells and thin film transistors. ADVANTAGE - The method is capable of economically and easily making a strip shaped graphene layer with excellent electrical and thermal properties and improved electron mobility and thermal conductivity. DETAILED DESCRIPTION - Making a strip shaped graphene layer (10), comprises providing a graphene film (30) on a surface of a metal substrate (20), disposing a carbon nanotube structure (40) on the graphene film, removing parts of the graphene film exposed by the at least one strip-shaped gap by reactive ion etching method to obtain a strip shaped graphene layer under the carbon nanotube structure, and separating the carbon nanotube structure with the strip shaped graphene layer. The carbon nanotube structure comprises at least one drawn carbon nanotube film comprising carbon nanotube segments. Each of the carbon nanotube segments is substantially parallel to each other and separated from each other by a strip-shaped gap, and there is at least one strip-shaped gap. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a method for making the strip shaped graphene layer. Strip shaped graphene layer (10) Substrate (20) Graphene film (30) Carbon nanotube structure (40) Graphene strips. (101)