• 专利标题:   Graphene planar plasma artificial structure based phase shifter, has silicon dioxide/silicon substrate, graphene film arranged on substrate, and open grooves periodically formed in graphene film.
  • 专利号:   CN104733811-A
  • 发明人:   DENG G, HUANG X, RUAN J, SANG L, YANG J, YIN Z, CAI F, HAN Y
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   H01P001/18
  • 专利详细信息:   CN104733811-A 24 Jun 2015 H01P-001/18 201565 Pages: 6 Chinese
  • 申请详细信息:   CN104733811-A CN10088954 26 Feb 2015
  • 优先权号:   CN10088954

▎ 摘  要

NOVELTY - A graphene planar plasma artificial structure based phase shifter has a silicon dioxide/silicon substrate, a graphene film arranged on the substrate, and open grooves periodically formed in the graphene film. USE - Graphene planar plasma artificial structure based phase shifter. ADVANTAGE - The shifter has compact structure, and can realize easy planar integration and work in a terahertz low-frequency stage. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene planar plasma artificial structure based phase shifter.