▎ 摘　　要

NOVELTY - The utility model claims a heating furnace and CVD reaction device, the heating furnace comprises a quartz tube and an electric heating assembly, the quartz tube inner part provided with a chamber; the electric heating assembly comprises a coil, a power supply and a graphite plate, the coil and the power connect, and the coil is spirally winding on the outer circumference of the quartz tube, after used for electrified, the magnetic field is generated in the chamber inside graphite disk is configured to be capable of entering and exiting the chamber, and can be correspondingly set with the coil, used for heat under the action of the magnetic field; the graphite plate used for the wafer substrate, one side of the wafer substrate surface used for provided with a surface used for Through the temperature of increasing heating, it is good for obtain with high graphene, and it can achieve preparing on the wafer substrate with high quality graphene and heating on the graphite, it can obviously reduce the temperature of the reaction gas, inhibiting gas phase side reaction, further increasing graphene the growth quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a CVD reaction device.