• 专利标题:   Full-solid-state Q-switched laser based on graphene bismuth telluride heterojunction saturable absorber, comprises pumping source, where bottom of pumping source is fixedly provided with placing frame.
  • 专利号:   CN216529829-U
  • 发明人:   XIA H
  • 专利权人:   UNIV BAOJI ARTS SCI
  • 国际专利分类:   H01S003/11
  • 专利详细信息:   CN216529829-U 13 May 2022 H01S-003/11 202243 Chinese
  • 申请详细信息:   CN216529829-U CN20045640 08 Jan 2022
  • 优先权号:   CN20045640

▎ 摘  要

NOVELTY - The utility model belongs to the technical field of laser, claims a full-solid-state Q-switched laser based on graphene bismuth telluride heterojunction saturable absorber, comprising a pumping source, the bottom of the pumping source is fixedly provided with a placing frame, one side of the placing frame is fixedly provided with a fixing frame, the inner wall of the fixing frame is fixedly provided with coupling lens group, one side of the fixed frame is fixedly provided with a combined frame, two sides of the combined frame inner respectively is fixedly provided with an input mirror M1 and an output mirror M2. saturable absorber by setting the graphene on the suitable substrate of the tellurium/bismuth telluride heterojunction; it can avoid the low modulation depth of graphite, the film forming of bismuth telluride is not uniform and easy to cause the problem of heat focusing, and graphene/bismuth telluride heterojunction can overcome the disadvantages of the two, It shows excellent saturable absorption performance.