▎ 摘　　要

NOVELTY - The device has a channel layer including a semiconductor material. A gate electrode is placed on the channel layer and spaced apart from the channel layer. A two-dimensional material layer (150) is formed between the channel layer and the gate electrode, where the two-dimensional material layer blocks an electron transfer between the gate electrode and the channel layer. The two-dimensional material layer includes a two-dimensional insulator, where the two-dimensional insulator includes boron nitride, manganese dioxide, molybdenum trioxide, gallium selenium, gallium oxide nitrate or arsenic sulfide. A graphene layer is formed between the two-dimensional material layer and the gate electrode. A charge trap layer is formed between the channel layer and the two-dimensional material layer. USE - Electronic device for use in an electronic apparatus (claimed). ADVANTAGE - The device improves performance of thin film structures in blocking a charge transfer between adjacent material layers, thus lowering resistivity of a metal layer by the two-dimensional material layer and improving performance of the electronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a thin film structure. 100Thin film structure 110Substrate 150Two-dimensional material layer 170Metal layer