▎ 摘　　要

NOVELTY - The method involves forming a graphene layer (122) on a metal catalyst substrate (110), and intercalating nitrogen ions between the metal catalyst substrate and the graphene layer. The method also involves forming an insulating layer (142) between the metal catalyst substrate and the graphene layer by heating the metal catalyst substrate to chemically combine the nitrogen ions with the metal catalyst substrate. USE - Method of intercalating insulating layer between metal catalyst layer and graphene layer in fabrication of semiconductor device, such as a field effect transistor. ADVANTAGE - Damage to or breakage of the graphene layer or infiltrations of impurities into the graphene layer that may occur in a process of transferring the graphene layer from the metal catalyst substrate to a surface of another material may be prevented. When a semiconductor device or a display apparatus is formed by using a graphene layer, the manufacturing process may be simplified and product yield may be increased. The electrical characteristics of the graphene layer may be maintained as they are, and thus, performances of a finally manufactured semiconductor device or a display apparatus may be improved. DESCRIPTION OF DRAWING(S) - The drawing is a schematic cross-sectional view illustrating a method of manufacturing a field effect transistor. Metal catalyst substrate (110) Graphene layer (122) Insulating layer (142) Source electrode (221) Drain electrode (222)