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  • 专利标题:   Graphene-based back electrode material used for polycrystalline cadmium telluride solar cell, has three-dimensional continuous network structure of graphene and binder.
  • 专利号:   CN102842354-A
  • 发明人:   BI H, HUANG F, LIANG J, LIN T
  • 专利权人:   CHINESE ACAD SCI SHANGHAI CERAMICS INST
  • 国际专利分类:   H01B001/24, H01B013/00, H01L031/0224
  • 专利详细信息:   CN102842354-A 26 Dec 2012 H01B-001/24 201377 Chinese
  • 申请详细信息:   CN102842354-A CN10165401 20 Jun 2011
  • 优先权号:   CN10165401

▎ 摘　　要

NOVELTY - A graphene-based back electrode material has three-dimensional continuous network structure of graphene and binder. USE - Graphene-based back electrode material used for polycrystalline cadmium telluride solar cell (claimed). ADVANTAGE - The graphene-based back electrode material having excellent conductive performance is manufactured economically by a simple and controlled process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the graphene-based back electrode.