▎ 摘　　要

NOVELTY - Patterned growth of vertically oriented graphene comprises (a) adopting ultraviolet lithography to prefabricate the required vertically oriented graphene pattern on a target substrate, (b) depositing a layer of oxide sacrificial layer on the substrate with photoresist pattern, and then depositing a layer of metal sacrificial layer on the oxide sacrificial layer, (c) ultrasonically peeling, exposing the pattern region, and covering the non-pattern region with oxide/metal double sacrificial layer, (d) adopting plasma enhanced chemical vapor system to grow vertically oriented graphene, where vertically oriented graphene directly grows on the substrate in the pattern area, and the vertically oriented graphene grows on the sacrificial layer in the non-pattern area, cooling, warping the sacrificial layer and separating from the substrate, and (e) blowing away the residue of the sacrificial layer using nitrogen to complete the growth of the patterned vertically oriented graphene. USE - The vertically oriented graphene is useful in energy storage, catalysis, biological sensing and light detection fields. ADVANTAGE - The method adopts oxide/metal double sacrificial layer method to reduce the damage of vertical oriented graphene caused by subsequent lithography and etching processes, and ensures high patterning fineness.