▎ 摘　　要

NOVELTY - The substrate (1) includes a support substrate (2) having a first main surface (2A) and a surface layer region which includes at least the first main surface and is formed of any one material selected from the group consisting of boron nitride, molybdenum disulfide, tungsten disulfide, niobium disulfide, and aluminum nitride. A graphene film (3) is disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of the material forming the surface layer region. USE - Substrate for electronic device (claimed), such as a field-effect transistor. ADVANTAGE - The substrate enables a high mobility to be stably ensured in the electronic device manufactured to include the graphene film forming an electrically conductive portion. The switching speed of an electronic device manufactured with the substrate can be increased. The efficiency of manufacture of an electronic device in which the substrate is used can be increased. DESCRIPTION OF DRAWING(S) - The drawing is a schematic cross-sectional view for illustrating the method for manufacturing a field effect transistor including a graphene film. Substrate (1) Support substrate (2) First main surface (2A) Graphene film (3) Source electrode (4)