▎ 摘　　要

NOVELTY - The method involves providing a substrate. Tap water, deionized water and ethyl alcohol and/or acetone are mixed to perform ultrasonic clean process. Contamination of the substrate is removed (AA). The substrate is formed (BB) with a graphene layer. The graphene layer is formed (CC) with a germanium thin film. Graphene layer and germanium thin film annealing process is performed at temperature of about 500 to 800 degrees centigrade. A germanium quantum point is grown (DD) on a graphene interface with different numbers of layers. Thickness of the graphene layer is about 30 nm. USE - Method for growing a germanium quantum point for preparing germanium quantum point composite material i.e. graphene-germanium quantum point composite material, for a solar energy battery, an LED, a photoelectric detector and an optical electric conversion device (all claimed). ADVANTAGE - The method enables introducing ultra-high uniformity graphene interfaces on a substrate surface, growing the germanium quantum points on the interfaces, avoiding complicated cleaning processes for obtaining high-quality interfaces, and simplifying process flows. The method enables achieving low-matrix element content and low defect rate of the germanium quantum points, facilitating self-organization growth process of the germanium quantum points, and forming the germanium quantum points with required shape and uniformity. DETAILED DESCRIPTION - The substrate is selected from a group consisting of a crystalline substrate, a glass substrate and a metal foil. The crystalline substrate is selected from a group consisting of silicon (Si), gallium nitride (GaN) or aluminum oxide (Al203) substrates. The glass substrate is selected from a group consisting of normal glass, quartz glass and toughened glass substrates. The metal foil is selected from a group consisting of a copper foil, a nickel foil and a nickel-copper alloy foil. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for growing a germanium quantum point.'(Drawing includes non-English language text)' Step for removing contamination of substrate (AA) Step for forming substrate with graphene layer (BB) Step for forming graphene layer with germanium thin film (CC) Step for growing germanium quantum point on a graphene interface with different numbers of layers (DD)