▎ 摘　　要

NOVELTY - This utility model claims flexible site effect transistor, relating to semiconductor technology area. The flexible site effect transistor comprising: interval between formed on flexible substrate and of the source pole and leakage pole, the source pole and leakage pole of the same one plane by semiconductor electric conduction channel electric connection, wherein the semiconductor electric conduction channel cover on the dielectric layer, and, with setting on the dielectric layer on the grid electrode. Wherein, the semiconductor electric conduction channel using carbon nano tube layer or graphene redox. This new utility model by using micro-electromechanical system process technology, print electronic technology and nano carbon material equal phase combination, preparation has good performance effect transistor on site in the flexible substrate, the structure is simple and flexible technology, cost is low, is suitable for mass production.