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  • 专利标题:   Method for preparing FET, involves preparing graphene film by chemical vapor deposition on metal substrate, utilizing graphene film as channel and fixing zinc oxide microrod on channel.
  • 专利号:   CN108648992-A
  • 发明人:   XU C, ZHAO J, YOU D, SHI Z, ZHU Y
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   H01L021/04, H01L029/786
  • 专利详细信息:   CN108648992-A 12 Oct 2018 H01L-021/04 201872 Pages: 11 Chinese
  • 申请详细信息:   CN108648992-A CN10385619 26 Apr 2018
  • 优先权号:   CN10385619

▎ 摘　　要

NOVELTY - A FET preparation method involves preparing graphene film by chemical vapor deposition on metal substrate, utilizing graphene film as channel and fixing zinc oxide microrod on the channel. USE - Method for preparing FET. ADVANTAGE - The method enables preparing FET with excellent performance and long service life.