▎ 摘　　要

NOVELTY - The method involves forming electron injection region, electron collection region and base region, with the base region consists of one or more graphene sheets. The base region is intermediate the electron injection region and electron collection region, and forms electrical interfaces with the electron injection and collection regions. USE - Method for making graphene base transistor with reduced collector area. ADVANTAGE - Graphene base is formed with lateral side portions on dielectric material with low dielectric constant in the third region right and left side material layer to reduce capacitance of base graphene material layer to the collector (emitter up configuration) or emitter (collector up configuration) in the third region or reduce the capacitance to the subcollector or to the substrate. Graphene is provided with high electrical conductivity which allows use of thin base graphene material layer which reduces the transit time of electrons through the base region and also reduces the energy loss of hot electrons in transiting the thin graphene base material. Enables enhanced lateral thermal conductivity of graphene to spread the thermal load to large area and reduce the thermal resistance. DESCRIPTION OF DRAWING(S) - The drawing shows the isometric vie of the graphene base transistor with reduced collector area.