▎ 摘　　要

NOVELTY - The flash memory unit has a graphene layer, a hexagonal boron nitride layer and a molybdenum disulfide layer that are sequentially arranged on a silicon dioxide or low resistance silicon substrate. Two-dimensional nano-material graphene, two-dimensional nano-material hexagonal boron nitride, and two-dimensional nano-material molybdenum disulfide are stacked on the substrate from bottom to top to form a heterojunction. Two gold-plated regions are provided on the molybdenum disulfide layer. USE - Multi-bit storage flash memory unit. ADVANTAGE - The memory unit realizes multi-state conductance values and multi-bit storage by applying electric fields of different strengths. The memory cell programming/erasing speed is able to be realized in order of milliseconds. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a storage method of multi-bit storage flash memory cell. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the multi-bit storage flash memory unit.