• 专利标题:   Monolithic boron-doped titanium silicalite catalyst carrier used for preparing titanium silicalite catalyst, has metal framework with interpenetrating three-dimensional pores inside, and boron-doped carbon layer grown on metal framework.
  • 专利号:   CN113457649-A, CN113457649-B
  • 发明人:   CHEN M, GAO P, CHEN J, ZHANG Z, WANG M, JI S, WANG H, LV H, SUN Y, CAO G
  • 专利权人:   UNIV EAST CHINA SCI TECHNOLOGY, SHANGHAI CUORUI LOWCARBON ENERGY TECHNO, SHANGHAI CURUI LOWCARBON ENERGY TECHNOL
  • 国际专利分类:   C07D303/04, C07D301/12, B01J037/08, B01J029/89, B01J021/18, B01J021/02
  • 专利详细信息:   CN113457649-A 01 Oct 2021 B01J-021/02 202101 Chinese
  • 申请详细信息:   CN113457649-A CN10650871 11 Jun 2021
  • 优先权号:   CN10650871

▎ 摘  要

NOVELTY - A monolithic boron-doped titanium silicalite-1 (TS-1) catalyst carrier has a metal framework with interpenetrating three-dimensional pores inside, and boron-doped carbon layer grown on the metal framework. USE - Monolithic boron-doped TS-1 catalyst carrier used for preparing TS-1 catalyst (claimed) used in one-step direct oxidation method for preparing propylene oxide. ADVANTAGE - The TS-1 is capable of covering surface of the catalyst carrier in the form of micro-crystal grain to maximize catalytic performance of TS-1 and effectively eliminate internal diffusion. The TS-1 catalyst is capable of improving selectivity of the main product propylene oxide and production efficiency, and reducing selectivity of the side reaction and production cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: 1. preparation of the monolithic boron-doped TS-1 catalyst carrier, which involves: a. taking metal framework for cleaning and drying; b. placing in a chemical vapor deposition furnace; c. raising temperature to required temperature under protection of argon gas or nitrogen; d. switching to pure hydrogen or a mixture of hydrogen and argon or nitrogen; e. mixing the raw materials containing boron and carbon in the form of gas and inert gas, or mixed gas of hydrogen gas; f. passing into chemical vapor deposition furnace; g. heating to grow boron-doped carbon layer on the metal framework; h. lowering temperature to room temperature; 2. application of the monolithic boron-doped TS-1 catalyst carrier for preparing monolithic TS-1 catalyst, which involves: a. dispersing and covering TS-1 catalyst on the surface of the monolithic boron-doped TS-1 catalyst carrier in the form micro-crystal grain.