▎ 摘　　要

NOVELTY - The structure has semiconductor doped regions separated from a gate region, where contacts of the structure are formed on the semiconductor doped regions that contain an n-type or a p-type doping region and a heavy doping region. The gate region comprises a gate medium layer and a gate electrode that comprises polycrystalline silicon material or metal material. Flow direction of working current of the device is from a semiconductor doped region to another semiconductor doped region by a graphene layer when the device applies voltage. USE - Graphene device structure for complementary metal-oxide-semiconductor (CMOS) device. ADVANTAGE - The semiconductor doped region is utilized to improve switching ratio of the device by reducing an intrinsic band gap of graphene material without utilizing transport factor of material or speed of the device, so that the graphene material is conveniently utilized in a CMOS device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene device structure.