▎ 摘　　要

NOVELTY - A semiconductor structure (503) contains graphene material and graphene-lattice matching material over at least a portion of graphene material. The graphene-lattice matching material has a lattice constant of plus minus 5% of a multiple of a lattice constant or bond length of the graphene material. USE - A semiconductor structure for semiconductor device e.g. field-effect transistor (FET), diode, triode, and resistant switching device (all claimed). ADVANTAGE - Graphene-lattice matching material may be formed thick enough to prevent leakage or direct tunneling. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) semiconductor device (500) comprising source (501), drain (502), gate structure (504), and semiconducting graphene structure adjacent to source and/or drain; and (2) modification of energy band gap of graphene material which involves forming graphene-lattice matching material over at least a portion of graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the side view of a semiconductor device. Semiconductor device (500) Source (501) Drain (502) Semiconductor structure (503) Gate structure (504)