▎ 摘　　要

NOVELTY - The structure comprises a buffer layer sequentially arranged on a silicon substrate, a non-doped aluminum nitride and gallium nitride layer, an N-type aluminum nitride and gallium nitride layer, a multi-quantum well layer, an electron blocking layer, a P-type aluminum nitride and gallium nitride layer and a P-contact layer. The buffer layer comprises a silicon dioxide layer, a silicon nitride layer, a graphene layer, and an aluminum nitroxide layer that are sequentially arranged on the silicon substrate. The graphene layer is a graphene nitride layer. The thickness of the silicon dioxide layer is 1-10nm, the thickness of the silicon nitride layer is 2-20nm, the thickness of the graphene layer is 0.5-5nm and the thickness of the aluminum nitride layer is 0.5-5nm. USE - Silicon-based UV-LED epitaxial structure for a UV-LED device (claimed) used in a semiconductor photoelectric device field. ADVANTAGE - The structure can effectively relieve the lattice mismatch of the silicon substrate and the aluminum gallium nitride epitaxial material, thermal mismatch, and improve the crystal quality of the aluminum nitride and gallium nitride alloy material, so as to improve the luminous efficiency of the UV-LED. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of silicon-based UV-LED epitaxial structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a silicon-based UV-LED epitaxial structure.